Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing
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Selective and localized laser-anneal effect for high-performance flexible multilayer MoS2 thin-film transistors
We report enhanced performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates with ultra‐short, pulsed‐laser annealed Ti/Au contacts without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible PEN substrate with low thermal bu...
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The electron dynamics in heterostructures formed by multilayer graphite and monolayer or bulk MoS2 were studied by femtosecond transient absorption measurements. Samples of monolayer MoS2-multilayer graphite and bulk MoS2-multilayer graphite were fabricated by exfoliation and dry transfer techniques. Ultrafast laser pulses were used to inject electron-hole pairs into monolayer or bulk MoS2. The...
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As a finite-energy-bandgap alternative to graphene, semiconducting molybdenum disulfide (MoS2) has recently attracted extensive interest for energy and sensor applications. In particular for broad-spectral photodetectors, multilayer MoS2 is more appealing than its monolayer counterpart. However, little is understood regarding the physics underlying the photoresponse of multilayer MoS2. Here, we...
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